Browse Patents by Publication Date

Publication Number Title
US10164050 Structure and formation method of semiconductor device structure with gate stack
US10164051 Method of cutting metal gate
US10164052 Semiconductor device and method for fabricating the same
US10164053 Semiconductor device and method
US10164054 Compound semiconductor field effect transistor with self-aligned gate
US10164055 Vertical FET with selective atomic layer deposition gate
US10164056 Vertical field effect transistors with uniform threshold voltage
US10164057 Vertical tunneling field effect transistor and method for manufacturing the same
US10164058 Semiconductor device and method of manufacturing semiconductor device
US10164059 FinFET device and fabricating method thereof
US10164060 Work function metal fill for replacement gate fin field effect transistor process
US10164061 Method of fabricating non-volatile memory device array
US10164062 FinFET device having a channel defined in a diamond-like shape semiconductor structure
US10164063 Semiconductor structure with protection layer
US10164064 FinFETs with low source/drain contact resistance
US10164065 Film deposition for 3D semiconductor structure
US10164066 FinFET devices and methods of forming
US10164067 Method of fabricating a semiconductor device
US10164068 FinFET structure and method for fabricating the same
US10164069 Devices including gate spacer with gap or void and methods of forming the same
US10164070 Self-aligned passivation of active regions
US10164072 Semiconductor device and manufacturing method thereof
US10164073 Apparatus and method for memory device
US10164074 Semiconductor device with gate electrode embedded in substrate
US10164075 Manufacturing method of semiconductor device including transistor
US10164076 Vertical tunneling field-effect transistor cell and fabricating the same
US10164077 Magnetic majority gate device
US10164078 Bipolar semiconductor device with multi-trench enhancement regions
US10164079 Power semiconductor device
US10164080 Electrode pair, method for fabricating the same, substrate for device, and device
US10164081 Method for forming an implanted area for a heterojunction transistor that is normally blocked
US10164082 Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
US10164083 Silicon carbide semiconductor device and manufacturing method therefor
US10164084 Semiconductor device and method of manufacturing the same
US10164085 Apparatus and method for power MOS transistor
US10164086 Vertical field effect transistor device having alternating drift regions and compensation regions
US10164087 Semiconductor device and method of manufacturing same
US10164088 Trench MOSFET with depleted gate shield and method of manufacture
US10164089 Power MOSFET
US10164090 Semiconductor device and method of manufacturing the same
US10164091 Electronic device including a ring suppression structure
US10164092 Tapered vertical FET having III-V channel
US10164093 Semiconductor device including an epitaxy region
US10164094 Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof
US10164095 FinFET with doped isolation insulating layer
US10164096 Semiconductor device and manufacturing method thereof
US10164097 Semiconductor device and manufacturing method thereof
US10164098 Method of manufacturing semiconductor device
US10164099 Device with diffusion blocking layer in source/drain region
US10164100 Formation method and structure semiconductor device with source/drain structures
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