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Patent Analysis of

Micro-LED array display devices

Updated Time 12 June 2019

Patent Registration Data

Publication Number

US10062675

Application Number

US15/613233

Application Date

04 June 2017

Publication Date

28 August 2018

Current Assignee

LUMENS CO., LTD

Original Assignee (Applicant)

LUMENS CO., LTD.

International Classification

H01L25/16,H01L33/62,H01L33/38,H01L27/15,H01L25/075

Cooperative Classification

H01L25/167,H01L25/0753,H01L27/156,H01L33/36,H01L33/62

Inventor

CHANG, HANBEET,SHIN, EUNSUNG,CHO, HYUNYONG

Patent Images

This patent contains figures and images illustrating the invention and its embodiment.

US10062675 Micro-LED array display devices 1 US10062675 Micro-LED array display devices 2 US10062675 Micro-LED array display devices 3
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Abstract

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

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Claims

1. A micro-LED array display device comprising:

a micro-LED panel comprising a substrate and a plurality of micro-LED pixels formed on the substrate by growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer in order on the substrate and removing the active layer and the second conductivity-type semiconductor layer in predetermined portions to expose the first conductivity-type semiconductor layer, whereby the micro-LED pixels have a vertical structure including the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer in order on the substrate and none of the micro-LED pixels is formed on the substrate in the exposed portions; a CMOS backplane comprising a plurality of CMOS cells corresponding to the micro-LED pixels; bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells; and a first conductivity-type metal layer formed over a portion of the exposed portions of the first conductivity-type semiconductor layer, the first conductivity-type metal layer being spaced from the micro-LED pixels, wherein the first conductivity-type metal layer functions as a common electrode of the micro-LED pixels, wherein the micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled, and wherein the first conductivity-type metal layer has the same height as the micro-LED pixels.

2. The micro-LED array display device according to claim 1, wherein the first conductivity-type metal layer is formed along the periphery of the micro-LED panel on the first conductivity-type semiconductor layer.

3. The micro-LED array display device according to claim 1, wherein the CMOS backplane comprises a common cell formed at a position corresponding to the first conductivity-type metal layer and the first conductivity-type metal layer is electrically connected to the common cell through a common bump.

4. The micro-LED array display device according to claim 1, wherein the first conductivity-type is n-type and the second conductivity-type is p-type.

5. The micro-LED array display device according to claim 1, wherein the substrate is made of a material selected from sapphire, SiC, Si, glass, and ZnO.

6. The micro-LED array display device according to claim 1, wherein the bumps are formed corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels.

7. A micro-LED array display device to achieve full color comprising:

first, second, and third micro-LED panels emitting light of different wavelength bands, each of the micro-LED panels comprising a substrate and a plurality of micro-LED pixels formed on the substrate by growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer in order on the substrate of the corresponding first, second, or third micro-LED panel and removing the active layer and the second conductivity-type semiconductor layer in predetermined portions to expose the first conductivity-type semiconductor layer, whereby the micro-LED pixels of each of the first, second, and third micro-LED panels have a vertical structure including the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer formed in order on the substrate of the corresponding first, second, or third micro-LED panel and none of the micro-LED pixels is formed on the substrate in the exposed portions; a single CMOS backplane comprising a plurality of CMOS cells corresponding to the micro-LED pixels; bumps electrically connecting the micro-LED pixels of the first, second, and third micro-LED panels to the corresponding CMOS cells in a state in which the micro-LED pixels of the first, second, and third micro-LED panels are arranged to face the CMOS cells; and a first conductivity-type metal layer formed over a portion of the exposed portions of the first conductivity-type semiconductor layer of each of the first, second, and third micro-LED panels, the first conductivity-type metal layer being spaced from the micro-LED pixels of each of the first, second, and third micro-LED panels, wherein the first conductivity-type metal layer functions as a common electrode of the micro-LED pixels, wherein the micro-LED pixels of the first, second, and third micro-LED panels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled, and wherein the first conductivity-type metal layer of each of the first, second, and third micro-LED panels has the same height as the micro-LED pixels of the first, second, and third micro-LED panels.

8. The micro-LED array display device according to claim 7, wherein the first conductivity-type metal layer of each of the first, second, and third micro-LED panels is formed along the periphery of each of the first, second, and third micro-LED panels on the first conductivity-type semiconductor layer of each of the first, second, and third micro-LED panels.

9. The micro-LED array display device according to claim 7, wherein the single CMOS backplane comprises a common cell formed at a position corresponding to the first conductivity-type metal layer of each of the first, second, and third micro-LED panels and the first conductivity-type metal layer is electrically connected to the common cell through a common bump.

10. The micro-LED array display device according to claim 7, wherein the first conductivity-type is n-type and the second conductivity-type is p-type.

11. The micro-LED array display device according to claim 7, wherein the substrate is made of a material selected from sapphire, SiC, Si, glass, and ZnO.

12. The micro-LED array display device according to claim 7, wherein the bumps are formed corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels.

13. A micro-LED array display device comprising:

a micro-LED panel comprising:

a substrate; a plurality of micro-LED pixels formed on the substrate, each of the plurality of micro-LED pixels having a vertical structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer formed in order on the substrate; a first etched portion between the plurality of micro-LED pixels, the first etched portion being formed by etching the active layer and the second conductivity-type semiconductor layer in a predetermined first portion over the first-conductivity-type semiconductor layer to form the plurality of micro-LED pixels and to separate the plurality of micro-LED pixels from one another; a second etched portion in a periphery of the plurality of micro-LED pixels, the second etched portion being formed by etching the active layer and the second conductivity-type semiconductor layer in the periphery around the plurality of micro-LED pixels to expose the first conductivity-type semiconductor layer therein; a first conductivity-type metal layer formed over the first conductivity-type semiconductor layer in the second etched portion, such that the first conductivity-type metal layer functions as a common electrode for the plurality of micro-LED pixels; a CMOS backplane comprising a plurality of CMOS cells corresponding to the plurality of micro-LED pixels; and a plurality of bumps electrically connecting the plurality of micro-LED pixels to the corresponding plurality of CMOS cells, wherein the micro-LED pixels are arranged to face the CMOS cells.

14. The micro-LED array display device of claim 13, wherein the CMOS backplane comprises a common cell formed at a position corresponding to the first conductivity-type metal layer, and the first conductivity-type metal layer is electrically connected to the common cell through a common bump.

15. The micro-LED array display device of claim 13, wherein the first conductivity-type is n-type, and the second conductivity-type is p-type.

16. The micro-LED array display device of claim 13, wherein the substrate is made of a material selected from sapphire, SiC, Si, glass, and ZnO.

17. The micro-LED array display device of claim 13, wherein the plurality of bumps are formed corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels.

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Claim Tree

  • 1
    display device comprising: a micro LED panel
    • mprising a substrate and a plurality of micro-LED pixels formed on the substrate by growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer in order on the substrate and removing the active layer and the second conductivity-type semiconductor layer in predetermined portions to expose the first conductivity-type semiconductor layer, whereby the micro-LED pixels have a vertical structure including the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer in order on the substrate and none of the micro-LED pixels is formed on the substrate in the exposed portions; a CMOS backplane c
    • prising a plurality of CMOS cells corresponding to the micro-LED pixels; bumps electrically
    • onnecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells; and a first conduc
    • vity-type metal layer formed over a portion of the exposed portions of the first conductivity-type semiconductor layer, the first conductivity-type metal layer being spaced from the micro-LED pixels, wherein the first conductivity-type metal layer functions as a common electrode of the micro-LED pixels, wherein the micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled, and wherein the first conductivity-type metal layer has the same height as the micro-LED pixels. 2. The micro-LED ar
    • ay display device according to claim 1, wherein the first c nductiv
      • ty-type metal layer is formed along the periphery of the micro-LED panel on the first conductivity-type semiconductor layer. 3. The micro-LED ar
    • ay display device according to claim 1, wherein the CMOS ba kplane
      • omprises a common ell forme
    • ay display device according to claim 1, wherein the first c nductiv
      • ty-type is n-type and the second conductivity-type is p-type. 5. The micro-LED ar
    • ay display device according to claim 1, wherein the substra e is ma
      • e of a material selected from sapphire, SiC, Si, glass, and ZnO. 6. The micro-LED ar
    • ay display device according to claim 1, wherein the bumps a e forme
      • corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels. 7. A micro-LED arra
  • 7
    display device to achieve full color comprising: first, econd, and
    • hird micro-LED panels emitting light of different wavelength bands, each of the micro-LED panels comprising a substrate and a plurality of micro-LED pixels formed on the substrate by growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer in order on the substrate of the corresponding first, second, or third micro-LED panel and removing the active layer and the second conductivity-type semiconductor layer in predetermined portions to expose the first conductivity-type semiconductor layer, whereby the micro-LED pixels of each of the first, second, and third micro-LED panels have a vertical structure including the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer formed in order on the substrate of the corresponding first, second, or third micro-LED panel and none of the micro-LED pixels is formed on the substrate in the exposed portions; a single CMOS back
    • ane comprising a plurality of CMOS cells corresponding to the micro-LED pixels; bumps electrically
    • onnecting the micro-LED pixels of the first, second, and third micro-LED panels to the corresponding CMOS cells in a state in which the micro-LED pixels of the first, second, and third micro-LED panels are arranged to face the CMOS cells; and a first conduc
    • vity-type metal layer formed over a portion of the exposed portions of the first conductivity-type semiconductor layer of each of the first, second, and third micro-LED panels, the first conductivity-type metal layer being spaced from the micro-LED pixels of each of the first, second, and third micro-LED panels, wherein the first conductivity-type metal layer functions as a common electrode of the micro-LED pixels, wherein the micro-LED pixels of the first, second, and third micro-LED panels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled, and wherein the first conductivity-type metal layer of each of the first, second, and third micro-LED panels has the same height as the micro-LED pixels of the first, second, and third micro-LED panels. 8. The micro-LED ar
    • ay display device according to claim 7, wherein the first c nductiv
      • ty-type metal layer of each of the first, second, and third micro-LED panels is formed along the periphery of each of the first, second, and third micro-LED panels on the first conductivity-type semiconductor layer of each of the first, second, and third micro-LED panels. 9. The micro-LED ar
    • ay display device according to claim 7, wherein the single MOS bac
      • plane comprises a common ell forme
    • ray display device according to claim 7, wherein the first c nductiv
      • ty-type is n-type and the second conductivity-type is p-type. 11. The micro-LED a
    • ray display device according to claim 7, wherein the substra e is ma
      • e of a material selected from sapphire, SiC, Si, glass, and ZnO. 12. The micro-LED a
    • ray display device according to claim 7, wherein the bumps a e forme
      • corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels. 13. A micro-LED arr
  • 13
    y display device comprising: a micro LED panel
    • mprising: a substrate; a plurality of mic
    • -LED pixels formed on the substrate, each of the plurality of micro-LED pixels having a vertical structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer formed in order on the substrate; a first etched por
    • on between the plurality of micro-LED pixels, the first etched portion being formed by etching the active layer and the second conductivity-type semiconductor layer in a predetermined first portion over the first-conductivity-type semiconductor layer to form the plurality of micro-LED pixels and to separate the plurality of micro-LED pixels from one another; a second etched po
    • ion in a periphery of the plurality of micro-LED pixels, the second etched portion being formed by etching the active layer and the second conductivity-type semiconductor layer in the periphery around the plurality of micro-LED pixels to expose the first conductivity-type semiconductor layer therein; a first conductivi
    • -type metal layer formed over the first conductivity-type semiconductor layer in the second etched portion, such that the first conductivity-type metal layer functions as a common electrode for the plurality of micro-LED pixels; a CMOS backplane c
    • prising a plurality of CMOS cells corresponding to the plurality of micro-LED pixels; and a plurality of
    • umps electrically connecting the plurality of micro-LED pixels to the corresponding plurality of CMOS cells, wherein the micro-LED pixels are arranged to face the CMOS cells. 14. The micro-LED a
    • ray display device of claim 13, wherein the CMOS ba kplane
      • omprises a common ell forme
    • ray display device of claim 13, wherein the first c nductiv
      • ty-type is n-type, and the second conductivity-type is p-type. 16. The micro-LED a
    • ray display device of claim 13, wherein the substra e is ma
      • e of a material selected from sapphire, SiC, Si, glass, and ZnO. 17. The micro-LED a
    • ray display device of claim 13, wherein the plurali y of bu
      • ps are formed corresponding to the CMOS cells and the CMOS cells are electrically connected to the corresponding micro-LED pixels.
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Description

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of Korean Patent Application No. 10-2016-0090600, filed Jul. 18, 2016, the entire content of which is incorporated herein in its entirety by reference.

TECHNICAL FIELD

The present invention relates to micro-LED array display devices, and more specifically to micro-LED array display devices in which a plurality of micro-LED pixels are arrayed on one micro-LED panel by etching for the production of LED chips and the pixel-arrayed micro-LED panel is flip-chip bonded to a CMOS backplane through bumps so that the micro-LED pixels can be individually driven, thus being suitable for microdisplay applications.

BACKGROUND

Demand for light emitting diodes (LEDs) has expanded exponentially in terms of low power consumption and environmental friendliness. LEDs are used as backlights for lighting apparatuses and LCD devices and are widely applied to display devices.

LEDs are kinds of solid-state elements that convert electrical energy into light. LEDs are based on the principle that when a voltage is applied between two doped layers, i.e. an n-type semiconductor layer and a p-type semiconductor layer, between which an active layer is interposed, electrons and holes are injected into and recombine in the active layer to emit light. LEDs can be driven at relatively low voltage and have high energy efficiency. Due to these advantages, LEDs release a small amount of heat. LEDs can be produced in various types. Particularly, micro-LED array display devices are fabricated based on types of LEDs in which a plurality of micro-LED pixels are formed on one wafer. According to a conventional method for the fabrication of a micro-LED array display device in which a plurality of micro-LED pixels are formed on one wafer, a p-type terminal and an n-type terminal are formed in each pixel through a chip production process and are arrayed along the longitudinal and transverse axes of signal lines to drive the pixel. In this case, elements responsible for signal control in the micro-LED pixels should be disposed in the vicinity of the micro-LED pixels, resulting in an increase in the size of the micro-LED array display device. Further, data lines arrayed along the longitudinal and transverse axes should be connected to the micro-LED pixels by wire bonding, making the process complicated and inconvenient.

The formation of a plurality of micro-LED pixels on one substrate technically limits the production of structures emitting red, green, and blue light. Because of this technical difficulty, the use of LEDs as light sources in micro-LED array display devices inevitably leads to the emission of monochromatic light. Thus, there is a need in the art for an approach that can provide a solution to the problems of the prior art.

SUMMARY

One object of the present invention is to provide a micro-LED array display device in which micro-LED pixels are flip-chip bonded to corresponding CMOS cells formed on a CMOS backplane through bumps, thus avoiding the complexity and inconvenience of wire bonding for connecting micro-LED pixels to various data lines while enabling individual control of the micro-LED pixels.

A further object of the present invention is to provide a micro-LED array display device in which micro-LED panels, each including a plurality of micro-LED pixels, are flip-chip bonded to a single CMOS backplane, thus overcoming the difficulties of the prior art in forming red, green, and blue light emitting structures including micro-LED pixels formed on one substrate.

According to one aspect of the present invention, there is provided a micro-LED array display device including: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells, wherein the micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

According to one embodiment, the micro-LED pixels are formed by growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer in this order on a substrate and etching the layers, the micro-LED pixels have a vertical structure including the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer formed in this order, and the active layer and the second conductivity-type semiconductor layer are removed from the exposed portions of the first conductivity-type semiconductor layer where none of the micro-LED pixels are formed.

According to one embodiment, a first conductivity-type metal layer is formed over the portions of the first conductivity-type semiconductor layer where none of the micro-LED pixels are formed and is spaced apart from the micro-LED pixels.

According to one embodiment, the first conductivity-type metal layer is formed along the periphery of the micro-LED panel on the first conductivity-type semiconductor layer.

According to one embodiment, the first conductivity-type metal layer has the same height as the micro-LED pixels.

According to one embodiment, the first conductivity-type metal layer functions as a common electrode of the micro-LED pixels.

According to one embodiment, the CMOS backplane includes a common cell formed at a position corresponding to the first conductivity-type metal layer and the first conductivity-type metal layer is electrically connected to the common cell through a common bump.

According to one embodiment, the first conductivity-type is n-type and the second conductivity-type is p-type.

According to one embodiment, the substrate is made of a material selected from sapphire, SiC, Si, glass, and ZnO.

According to one embodiment, the bumps are formed on the CMOS cells and are melted by heating such that the CMOS cells are electrically connected to the corresponding micro-LED pixels.

According to a further aspect of the present invention, there is provided a micro-LED array display device including: first, second, and third micro-LED panels emitting light of different wavelength bands, each of the micro-LED panels including a plurality of micro-LED pixels; a single CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels of the first, second, and third micro-LED panels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels of the first, second, and third micro-LED panels to the corresponding CMOS cells in a state in which the micro-LED pixels of the first, second, and third micro-LED panels are arranged to face the CMOS cells, wherein the micro-LED pixels of the first, second, and third micro-LED panels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

In the new concept of micro-LED array display device according to the present invention, micro-LED pixels are flip-chip bonded to micro-LED pixels formed on a CMOS backplane through bumps, avoiding the complexity and inconvenience of wire bonding for connecting micro-LED pixels to various data lines while enabling individual control of the micro-LED pixels. The micro-LED array display device of the present invention in which a plurality of micro-LED panels emitting red, green, and blue light are flip-chip bonded to a single CMOS backplane through bumps can focus three colors on the same area using an optical system to achieve full color. Therefore, the micro-LED array display device of the present invention is effective in overcoming the technical difficulties of the prior art in forming red, green, and blue light emitting structures including a plurality of micro-LED pixels on one substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects and advantages of the invention will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 illustrates an exemplary micro-LED panel 100 of a micro-LED array display device according to one embodiment of the present invention;

FIG. 2 illustrates the micro-LED panel 100 of FIG. 1 including micro-LED pixels and a CMOS backplane 200 including a plurality of CMOS cells adapted to individually drive the micro-LED pixels of the micro-LED panel 100;

FIG. 3 illustrates a state in which the micro-LED panel 100 and the CMOS backplane 200 illustrated in FIG. 2 are electrically connected to each other through bumps 300 arranged on the CMOS backplane 200;

FIG. 4 illustrates a state in which the micro-LED panel 100 and the CMOS backplane 200 illustrated in FIG. 3 are arranged to face each other through the bumps 300 to electrically connect the micro-LED pixels of the micro-LED panel 100 to the CMOS cells of the CMOS backplane 200;

FIG. 5 illustrates a state in which red, green, and blue micro-LED panels 1100, 1200, and 1300, a single CMOS backplane 2000 having CMOS cell areas 2100, 2200, and 2300 where the micro-LED panels 1100, 1200, and 1300 are to be electrically connected to CMOS cells, and bumps 3000 arranged on the CMOS cells to achieve full color in a micro-LED array display device according to one embodiment of the present invention;

FIG. 6 illustrates a state in which the red, green, and blue micro-LED panels 1100, 1200, and 1300 are electrically connected to the single CMOS backplane 2000 through the bumps 3000 in the micro-LED array display device of FIG. 5; and

FIG. 7 is a view for briefly explaining the driving of the micro-LED array display device illustrated in FIG. 5 to achieve full color.

DETAILED DESCRIPTION

The present invention is directed to a micro-LED array display device in which micro-LED pixels are arrayed by MESA etching and are flip-chip bonded to a CMOS backplane, thus being applicable to a micro display, such as a head mounted display (HMD) or head up display (HUD). In the micro-LED array display device of the present invention, micro-LED pixels arrayed by MESA etching for the production of LED chips are flip-chip bonded to a CMOS backplane so that they can be individually driven. The present invention is also directed to a micro-LED array display device in which three red, green, and blue light emitting elements, i.e. micro-LED panels, are arrayed on a CMOS backplane to achieve full color.

Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. The drawings and embodiments described with reference to the drawings are simplified and illustrated such that those skilled in the art can readily understand the present invention. Accordingly, the drawings and the embodiments should not be construed as limiting the scope of the present invention.

FIG. 1 illustrates an exemplary micro-LED panel 100 of a micro-LED array display device according to one embodiment of the present invention, FIG. 2 illustrates the micro-LED panel 100 including micro-LED pixels and a CMOS backplane 200 including a plurality of CMOS cells adapted to individually drive the micro-LED pixels of the micro-LED panel 100, FIG. 3 illustrates a state in which the micro-LED panel 100 and the CMOS backplane 200 are electrically connected to each other through bumps 300 arranged on the CMOS backplane 200, and FIG. 4 illustrates a state in which the micro-LED panel 100 and the CMOS backplane 200 are arranged to face each other through the bumps 300 to electrically connect the micro-LED pixels of the micro-LED panel 100 to the CMOS cells of the CMOS backplane 200.

Referring first to FIGS. 1 to 4, a description will be given of a micro-LED array display device according to one embodiment of the present invention. The micro-LED array display device includes a micro-LED panel 100, a CMOS backplane 200, and bumps 300. The micro-LED panel 100 includes a plurality of micro-LED pixels 130. The CMOS backplane 200 includes a plurality of CMOS cells 230 corresponding to the micro-LED pixels 130 to individually drive the micro-LED pixels 130. The micro-LED pixels 130 are electrically connected to the corresponding CMOS cells 230 through the bumps 300 in a state in which the micro-LED pixels 130 are arranged to face the CMOS cells 230. In FIGS. 1 to 4, only one of the micro-LED pixels and only one of the CMOS cells are denoted by reference numerals 130 and 230, respectively, for the purpose of convenience. The micro-LED pixels 130 are flip-chip bonded to the corresponding CMOS cells 230 formed on the CMOS backplane 200 through the bumps 300. Due to this construction, the micro-LED pixels 130 can be individually controlled.

The micro-LED pixels 130 of the micro-LED panel 100 are formed by growing a first conductivity-type semiconductor layer 132, an active layer 134, and a second conductivity-type semiconductor layer 136 in this order on a substrate 110 and etching the layers. The micro-LED pixels have a vertical structure including the first conductivity-type semiconductor layer 132, the active layer 134, and the second conductivity-type semiconductor layer 136 formed in this order on the substrate 110. The substrate 110 may be made of a material selected from sapphire, SiC, Si, glass, and ZnO. The first conductivity-type semiconductor layer 132 may be an n-type semiconductor layer and the second conductivity-type semiconductor layer 136 may be a p-type semiconductor layer. The active layer 134 is a region where electrons from the first conductivity-type semiconductor layer 132 recombine with holes from the second conductivity-type semiconductor layer 136 when power is applied.

The second conductivity-type semiconductor layer 136 and the active layer 134 are removed from the etched portions 120 of the micro-LED panel 100 where none of the micro-LED pixels 130 are formed, and as a result, the first conductivity-type semiconductor layer is exposed in the etched portions. The micro-LED panel 100 includes a first conductivity-type metal layer 140 formed over the portions 120 of the first conductivity-type semiconductor layer 132 where none of the micro-LED pixels 130 are formed. The first conductivity-type metal layer 140 is spaced apart from the micro-LED pixels 130. The first conductivity-type metal layer 140 is formed with a predetermined width along the periphery of the micro-LED panel 100 on the first conductivity-type semiconductor layer 132. The first conductivity-type metal layer 140 has substantially the same height as the micro-LED pixels 130. The first conductivity-type metal layer 140 is electrically connected to the CMOS backplane 200 through the bumps 300. As a result, the first conductivity-type metal layer 140 functions as a common electrode of the micro-LED pixels 130. For example, the first conductivity-type metal layer 140 may be a common ground.

The plurality of CMOS cells 230 of the CMOS backplane 200 serve to individually drive the micro-LED pixels 130. The CMOS cells 230 are electrically connected to the corresponding micro-LED pixels through bumps 330. The CMOS cells 230 are integrated circuits for individually driving the corresponding micro-LED pixels. The CMOS backplane 200 may be, for example, an active matrix (AM) panel. Specifically, each of the CMOS cells 230 may be a pixel driving circuit including two transistors and one capacitor. When the micro-LED panel 100 is flip-chip bonded to the CMOS backplane 200 through the bumps 300, each of the micro-LED pixels may be arranged between a drain terminal and a common ground terminal (e.g., reference numeral 240) of a transistor of the pixel driving circuit to form an equivalent circuit.

The CMOS backplane 200 includes a common cell 240 formed at a position corresponding to the first conductivity-type metal layer 140. The first conductivity-type metal layer 140 is electrically connected to the common cell 240 through a common bump 340. Herein, the bumps 300 is often intended to include the bumps 330 electrically connecting the plurality of CMOS cells to the micro-LED pixels and the common bump 340 electrically connecting the first conductivity-type metal layer 140 to the common cell 240.

As illustrated in FIG. 3, the CMOS backplane 200 on which the CMOS cells 230 are arranged faces the micro-LED panel 100. After the CMOS cells 230 are brought into contact with the micro-LED pixels 130 in a one-to-one relationship, the bumps 330 and the common bump 340 are melted by heating. As a result, the CMOS cells 230 are electrically connected to the corresponding micro-LED pixels 130, as illustrated in FIG. 4.

Referring next to FIGS. 5 and 6, a description will be given of a micro-LED array display device capable of achieving full color according to a further embodiment of the present invention. FIG. 5 illustrates a state in which red, green, and blue micro-LED panels 1100, 1200, and 1300, a single CMOS backplane 2000 having CMOS cell areas 2100, 2200, and 2300 where the micro-LED panels 1100, 1200, and 1300 are to be electrically connected to CMOS cells, and bumps 3000 arranged on the CMOS cells to achieve full color in a micro-LED array display device according to one embodiment of the present invention and FIG. 6 illustrates a state in which the red, green, and blue micro-LED panels 1100, 1200, and 1300 are electrically connected to the single CMOS backplane 2000 through the bumps 3000.

Referring to these figures, the micro-LED array display device capable of achieving full color includes a first micro-LED panel 1100, a second micro-LED panel 1200, and a third micro-LED panel 1300, each of which includes a plurality of arrayed micro-LED pixels. The first 1100, second 1200, and third micro-LED panels 1300 emit light of different wavelength bands. For example, the first, second, and third micro-LED panels 1100, 1200, and 1300 may be constructed to emit red light, green light, and blue light, respectively. The micro-LED array display device capable of achieving full color includes a single CMOS backplane 2000 adapted to individually drive the micro-LED pixels of the first, second, and third micro-LED panels 1100, 1200, and 1300. The single CMOS backplane 2000 includes a plurality of CMOS cells corresponding to the micro-LED pixels of the first, second, and third micro-LED panels 1100, 1200, and 1300. CMOS cell areas 2100, 2200, and 2300 are formed in the CMOS backplane 2000 such that the micro-LED panels 1100, 1200, and 1300 are arranged on the CMOS backplane 2000. The CMOS cell areas 2100, 2200, and 2300 are formed corresponding to the micro-LED panels 1100, 1200, and 1300, respectively. The micro-LED panels 1100, 1200, and 1300 are flip-chip bonded to the CMOS cell areas 2100, 2200, and 2300, respectively. A plurality of CMOS cells corresponding to the micro-LED pixels of the micro-LED panels 1100, 1200, and 1300 are formed in the CMOS cell areas 2100, 2200, and 2300, respectively. With this arrangement, the micro-LED panels 1100, 1200, and 1300 are flip-chip bonded to the single CMOS backplane 2000 to electrically connect the micro-LED pixels to the CMOS cells. The CMOS cells are electrically connected to the micro-LED pixels through bumps 3000. The flip-chip bonding of the micro-LED panels 1100, 1200, and 1300 to the single CMOS backplane 2000 is performed in the same manner as that of the micro-LED panel 100 to the CMOS backplane 200 explained with reference to FIGS. 1 to 4.

Common cells are formed in the CMOS cell areas 2100, 2200, and 2300 on the single CMOS backplane 2000 and are electrically connected to first conductivity-type metal layers of the micro-LED panels 1100, 1200, and 1300 through common bumps.

As described before, the micro-LED array display device of the present invention in which the plurality of independently fabricated micro-LED panels emitting light of different wavelength bands, i.e. red, light, and blue light, are flip-chip bonded to the single CMOS backplane 2000 can focus three colors on the same area using an optical system to achieve full color, thus overcoming the technical difficulties of the prior art in forming red, green, and blue light emitting structures on one substrate in the fabrication of micro-LEDs. In addition, the micro-LED array display device of the present invention can avoid the inconvenience or difficulty of wire bonding for connecting LED chips to various data lines, which run along the longitudinal and transverse axes and are responsible for the control of the LED chips. Furthermore, the micro-LED array display device of the present invention can eliminate the need to dispose elements responsible for signal control in LED chips at positions away from the LED chips, contributing to a reduction in the overall size of the display device.

Finally, FIG. 7 is a view for briefly explaining the driving of the micro-LED array display device illustrated in FIG. 5 to achieve full color. As illustrated in FIG. 7, the micro-LED array display device is driven in response to control signals from a drive IC 700. The control signals from the drive IC 700 are transmitted to the micro-LED pixels by the CMOS cells (i.e. CMOS integrated circuits) formed in the CMOS backplane 2000. The control signals from the drive IC 700 may be analog or digital signals. The digital signals may also be pulse width modulation (PWM) signals.

EXPLANATION OF REFERENCE NUMERALS

    • 100, 1100, 1200, 1300: Micro-LED panels
    • 110: Substrate
    • 120, 132: First conductivity-type semiconductor layers
    • 130: Micro-LED pixel
    • 134: Active layer
    • 136: Second conductivity-type semiconductor layer
    • 140: First conductivity-type metal layer
    • 200, 2000: CMOS backplanes
    • 230: CMOS cell
    • 240: Common cell
    • 340: Common bump
    • 300, 330, 3000, 3100, 3200, 3300: Bumps
    • 2100, 2200, 2300: CMOS cell areas
    • 700: Drive IC

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Citation

Patents Cited in This Cited by
Title Current Assignee Application Date Publication Date
Multi-Panel Display with Hot Swappable Display Panels and Methods of Servicing Thereof ULTRAVISION TECHNOLOGIES, LLC 22 May 2015 10 September 2015
多色LED素子およびその多色LED素子を用いたLED表示装置、並びに多色LED素子の製造方法 シャープ株式会社 20 December 1994 02 July 1996
空間光学型及び時空間光学型指向性光変調器 オステンド·テクノロジーズ·インコーポレーテッド 05 December 2012 19 January 2015
발명의 명칭 발광 다이오드 SEOUL VIOSYS CO., LTD. 서울바이오시스 주식회사 02 September 2014 10 March 2016
Micro-pixelated LED reticle display for optical aiming devices LEUPOLD & STEVENS, INC. 18 December 2014 25 June 2015
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US10062675 Micro-LED array display devices 1 US10062675 Micro-LED array display devices 2 US10062675 Micro-LED array display devices 3